Nexperia - NX138AKSX

  1. Home
  2. Nexperia - NX138AKSX
NX138AKSX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number NX138AKSX
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: 4.5 ohm; Transistor Element Material: SILICON;
Datasheet NX138AKSX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .17 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 4.5 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 568-13296-2-ND
568-13296-6-ND
568-13296-6
934070155115
1727-2732-6
568-13296-2
568-13296-1-ND
568-13296-1
5202-NX138AKSXTR
1727-2732-2
1727-2732-1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX3008PBK,215 by Nexperia

NX3008PBK,215

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JEDEC-95 Code: TO-236AB;
FDN360P_NL by Fairchild Semiconductor

FDN360P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN360P_NL is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2A, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
FDN337N-F169 by Onsemi

FDN337N-F169

Onsemi

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
FDN335N by Fairchild Semiconductor

FDN335N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .07 ohm;
BSS84-7-F by SPC TECHNOLOGY/ MULTICOMP

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
BSS83PH6327 by Infineon Technologies

BSS83PH6327

Infineon Technologies

BSS83PH6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage. It features a single configuration with built-in diode, 0.33A max drain current, and 3 ohm max on resistance. Ideal for small outline applications requiring low power dissipation and high operating temperatures up to 150°C.
LND150K1-G by Microchip Technology

LND150K1-G

Microchip Technology

LND150K1-G by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max power dissipation of 0.36W and can handle a max drain current of 0.013A. With a temp range from -55 to 150 °C, this MOSFET is suitable for various electronic designs.
DMP6023LFG-7 by Diodes Incorporated

DMP6023LFG-7

Diodes Incorporated

DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.
NDS7002A_NL by Fairchild Semiconductor

NDS7002A_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.
BSS123 by Nexperia

BSS123

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 10 pF; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
BSS138BK by Micro Commercial Components

BSS138BK

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
FDN5630_NL by Fairchild Semiconductor

FDN5630_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN5630_NL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.1 ohm On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C temperature.
FDC6312P by Fairchild Semiconductor

FDC6312P

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
NTR4170NT1G by Onsemi

NTR4170NT1G

Onsemi

NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.
SI4459ADY-T1-GE3 by Vishay Siliconix

SI4459ADY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
FDC5612 by Onsemi

FDC5612

Onsemi

FDC5612 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 4.3A and an On Resistance of 0.055 ohm. With a small outline package style and operating temperature up to 150°C, it is suitable for various electronic devices requiring high power dissipation.
FDN304P by Onsemi

FDN304P

Onsemi

FDN304P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.4A and 0.052ohm on-resistance, operating in enhancement mode at up to 150°C. With a small outline package style and matte tin finish, it offers efficient performance in compact designs.
FDV301ND87Z by Fairchild Semiconductor

FDV301ND87Z

Fairchild Semiconductor

FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.
FDV302P by Onsemi

FDV302P

Onsemi

FDV302P by Onsemi is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
2N7002 by Unisonic Technologies

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;