Nexperia - PBHV3160Z-Q

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PBHV3160Z-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PBHV3160Z-Q
Description Power Bipolar Transistors;
Datasheet PBHV3160Z-Q Datasheet
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TIP3055 by Power Innovations

TIP3055

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
TIP42C by Inchange Semiconductor

TIP42C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP147T by Onsemi

TIP147T

Onsemi

TIP147T by Onsemi is a PNP BJT with 80W power dissipation, 500 min hFE, and 10A max collector current. Ideal for high-power applications like motor control and audio amplifiers due to its 100V max VCE and built-in diode/resistor in a rectangular package.
2N3055 by New England Semiconductor

2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD13910S by Fairchild Semiconductor

BD13910S

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP42A by Inchange Semiconductor

TIP42A

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BCP56-16 by Diodes Incorporated

BCP56-16

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;
D44H11 by Central Semiconductor

D44H11

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP127 by Micro Commercial Components

TIP127

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Finish: TIN LEAD;
TIP110 by Crimson Semiconductor

TIP110

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;
MJD122T4 by Onsemi

MJD122T4

Onsemi

The Onsemi MJD122T4 is a NPN Darlington BJT with built-in diode and resistor, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 235°C, it offers high power dissipation up to 20W in a compact rectangular shape.
JAN2N3055 by Cobham Plc

JAN2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; Package Shape: ROUND;
TIP117 by Nte Electronics

TIP117

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP42A by Microsemi

TIP42A

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
MJE340 by Continental Device India

MJE340

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
TIP111G by Onsemi

TIP111G

Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
BD679 by Crimson Semiconductor

BD679

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Maximum VCEsat: 2.5 V;
TIP3055 by SPC TECHNOLOGY/ MULTICOMP

TIP3055

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
TIP111 by Texas Instruments

TIP111

Texas Instruments

TIP111 by Texas Instruments is a NPN Darlington BJT with max power dissipation of 50W. It has min hFE of 500 and max VCE of 80V, ideal for high-power applications in flange mount packages. Suitable for switching and amplification tasks due to its silicon transistor element material and single terminal position.
TIP42C by Power Innovations

TIP42C

Power Innovations

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 100 V;