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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | PMCM4401VNEAZ |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 4.7 A; No. of Terminals: 4; |
| Datasheet | PMCM4401VNEAZ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
1727-2686-2 568-13205-1 934068854084 1727-2686-1 5202-PMCM4401VNEAZTR 568-13205-6-ND 1727-2686-6 568-13205-1-ND 568-13205-2 568-13205-2-ND 568-13205-6 PMCM4401VNEAZ-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.7 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 12 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | S-PBGA-B4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | IEC-60134 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .054 ohm |









