PMCM650VNEZ by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMCM650VNEZ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; Maximum Drain Current (ID): 6.4 A; Package Style (Meter): GRID ARRAY;
Datasheet	PMCM650VNEZ Datasheet

NAME	DESCRIPTION
Other Names:	NEXNXPPMCM650VNEZ 2156-PMCM650VNEZ-NXTR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	12 V
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	R-PBGA-B6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	IEC-60134
Maximum Drain-Source On Resistance:	.032 ohm

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