Nexperia - PMDXB550UNEZ

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PMDXB550UNEZ by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMDXB550UNEZ
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain Current (ID): .59 A; Operating Mode: ENHANCEMENT MODE;
Datasheet PMDXB550UNEZ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .59 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 568-12563-2-ND
568-12563-1
5202-PMDXB550UNEZTR
568-12563-1-ND
2156-PMDXB550UNEZ-1727
934069326147
1727-2277-1
1727-2277-2
568-12563-2
1727-2277-6
568-12563-6-ND
568-12563-6
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
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