Nexperia - PMF250XNEAX

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PMF250XNEAX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMF250XNEAX
Description Small Signal Field-Effect Transistors;
Datasheet PMF250XNEAX Datasheet
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2N7000 by Kec

2N7000

Kec

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Qualification: Not Qualified; Transistor Application: SWITCHING;
FDC638P by Onsemi

FDC638P

Onsemi

FDC638P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.048 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55°C to 150°C.
FDN5630 by Onsemi

FDN5630

Onsemi

FDN5630 by Onsemi is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 1.7A.
2N7002DW by Weitron Technology

2N7002DW

Weitron Technology

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
BSS138W by Good-ark Electronics

BSS138W

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
FDC6327C by Onsemi

FDC6327C

Onsemi

FDC6327C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 2.7A, on-resistance of 0.08 ohm, and operates in enhancement mode for switching applications. The package is SMD, with 6 terminals in Gull Wing form, rated up to 150°C.
AO3401A by Alpha & Omega Semiconductor

AO3401A

Alpha & Omega Semiconductor

AO3401A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for various electronic devices.
BSS138LT7G by Onsemi

BSS138LT7G

Onsemi

BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
BSS138P,215 by Nexperia

BSS138P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
FDN339AN by Onsemi

FDN339AN

Onsemi

Onsemi's FDN339AN is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.035 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount in small outline packages.
2N7002K-T1-E3 by Vishay Intertechnology

2N7002K-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002K-T1-E3 is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. Package style is SMALL OUTLINE, with GULL WING terminals and max power dissipation of 0.35W.
SI2301CDS-T1-GE3 by Vishay Intertechnology

SI2301CDS-T1-GE3

Vishay Intertechnology

SI2301CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.1A Drain Current, and 0.112 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it operates b/w -55 to 150 °C in SMALL OUTLINE package style.
2N7002-G by Supertex

2N7002-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH INPUT IMPEDANCE; No. of Elements: 1; Terminal Finish: MATTE TIN;
2N7000G by Rochester Electronics

2N7000G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
ZXMP4A16GTA by Diodes Incorporated

ZXMP4A16GTA

Diodes Incorporated

ZXMP4A16GTA by Diodes Inc. is a P-CHANNEL FET with 40V DS breakdown voltage, 4.6A max drain current, and 0.06 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation at up to 150°C.
IRLML6402TRPBF-1 by International Rectifier

IRLML6402TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
2N7002KW by Micro Commercial Components

2N7002KW

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Qualification: Not Qualified;
FDC640P by Onsemi

FDC640P

Onsemi

The Onsemi FDC640P is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.053 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
FDS6679AZ by Fairchild Semiconductor

FDS6679AZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; JESD-609 Code: e3;
SI4816BDY-T1-E3 by Vishay Intertechnology

SI4816BDY-T1-E3

Vishay Intertechnology

SI4816BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Drain Current of 5.8A and Min DS Breakdown Voltage of 30V. Ideal for applications requiring high drain current in small outline packages, operating b/w -55 to 150°C.