Nexperia - PMF250XNEAX

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PMF250XNEAX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMF250XNEAX
Description Small Signal Field-Effect Transistors;
Datasheet PMF250XNEAX Datasheet
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NDC7003P by National Semiconductor

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NDS0605 by Rochester Electronics

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2V7002KT1G by Onsemi

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2V7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.38A Drain Current, and 1.6ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C with a max power dissipation of 0.42W.
BSS223PWH6327XTSA1 by Infineon Technologies

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FDC6327C by Onsemi

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IRLML2803TRPBF-1 by Infineon Technologies

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FDV302P_NL by Fairchild Semiconductor

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BS170 by Vishay Siliconix

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FDC5612 by Fairchild Semiconductor

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Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
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DMP10H4D2S-7 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage, 0.27A max drain current, and 4.2 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C min operating temp.
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