Vishay Intertechnology - SI2323DS-T1-E3

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SI2323DS-T1-E3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI2323DS-T1-E3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
Datasheet SI2323DS-T1-E3 Datasheet
In Stock58,679
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.7 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .039 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SI2323DS-T1-E3TR
SI2323DST1E3
SI2323DS-T1-E3CT
SI2323DS-T1-E3DKR
Q6936817FO
Maximum Feedback Capacitance (Crss): 140 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.7 A
Peak Reflow Temperature (C): 260
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