PMPB12R5EPX by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMPB12R5EPX
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
Datasheet	PMPB12R5EPX Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8.8 A
Maximum Pulsed Drain Current (IDM):	35 A
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	12.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.015 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	139 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	IEC-60134

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