PMV35EPER by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMV35EPER
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .045 ohm;
Datasheet	PMV35EPER Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.2 A
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.045 ohm
Moisture Sensitivity Level (MSL):	1

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