Nexperia - PMV52ENE

PMV52ENE by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMV52ENE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (ID): 3.2 A; Terminal Form: GULL WING;
Datasheet PMV52ENE Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.2 A
Maximum Pulsed Drain Current (IDM): 13 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .07 ohm
Maximum Feedback Capacitance (Crss): 19 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: IEC-60134
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