Nexperia - PSMN0R7-25YLDX

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PSMN0R7-25YLDX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PSMN0R7-25YLDX
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PSMN0R7-25YLDX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 300 A
Maximum Pulsed Drain Current (IDM): 1482 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00092 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 174 mJ
Other Names: 568-12952-1
5202-PSMN0R7-25YLDXTR
568-12952-2-ND
1727-2514-1
1727-2514-2
934069083115
568-12952-2
568-12952-6-ND
PSMN0R7-25YLDX-ND
1727-2514-6
568-12952-1-ND
568-12952-6
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Additional Features: HIGH RELIABILITY
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
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