PSMN4R2-40VSHX by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PSMN4R2-40VSHX
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
Datasheet	PSMN4R2-40VSHX Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	98 A
Maximum Pulsed Drain Current (IDM):	393 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	85 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-X8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN SOURCE
Maximum Drain-Source On Resistance:	.0042 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	42.3 mJ
Other Names:	1727-PSMN4R2-40VSHXTR 5202-PSMN4R2-40VSHXTR 1727-PSMN4R2-40VSHXDKR 934662503115 1727-PSMN4R2-40VSHXCT
Maximum Feedback Capacitance (Crss):	200 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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