Nexperia - PSMN6R5-30MLDX

  1. Home
  2. Nexperia - PSMN6R5-30MLDX
PSMN6R5-30MLDX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PSMN6R5-30MLDX
Description Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet PSMN6R5-30MLDX Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRF530A by Fairchild Semiconductor

IRF530A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
SIR873DP-T1-GE3 by Vishay Intertechnology

SIR873DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
2N7002PV,115 by NXP Semiconductors

2N7002PV,115

NXP Semiconductors

2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IRF7401TRPBF by Infineon Technologies

IRF7401TRPBF

Infineon Technologies

Infineon's IRF7401TRPBF is an N-channel FET with a 20V breakdown voltage and 8.7A max drain current. Ideal for switching applications, it features a built-in diode, 0.022 ohm on-resistance, and can handle up to 35A pulsed drain current in enhancement mode operation.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
2N7000 by Unisonic Technologies

2N7000

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
NCV8406ASTT3G by Onsemi

NCV8406ASTT3G

Onsemi

NCV8406ASTT3G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. Ideal for use in automotive electronics due to AEC-Q101 standard compliance.
PMV100EPAR by Nexperia

PMV100EPAR

Nexperia

The Nexperia PMV100EPAR is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 9A IDM and 33mJ EAS, operating in ENHANCEMENT MODE at -55 to 175 °C. With a 0.13 ohm RDS(on), this transistor is suitable for various power management tasks in automotive and industrial sectors.
FDD6637 by Fairchild Semiconductor

FDD6637

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BSC011N03LSTATMA1 by Infineon Technologies

BSC011N03LSTATMA1

Infineon Technologies

Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.
IRFL9014PBF by Vishay Intertechnology

IRFL9014PBF

Vishay Intertechnology

Vishay Intertechnology's IRFL9014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.5 ohm Drain-Source On Resistance and 3.1W Max Power Dissipation.
IRFZ44NS by Transys Electronics

IRFZ44NS

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
IRFR5305TRPBF by International Rectifier

IRFR5305TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
CSD19536KTTT by Texas Instruments

CSD19536KTTT

Texas Instruments

CSD19536KTTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 400A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 175°C. With a low on-resistance of 0.0028 ohm, this MOSFET is ideal for high-power switching circuits.
IRLML5203TRPBF by Infineon Technologies

IRLML5203TRPBF

Infineon Technologies

Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
IRFZ44NSTRL by International Rectifier Hirel Products

IRFZ44NSTRL

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
IRLML0100TRPBF-1 by Infineon Technologies

IRLML0100TRPBF-1

Infineon Technologies

Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.
IRF7842TRPBF by Infineon Technologies

IRF7842TRPBF

Infineon Technologies

Infineon's IRF7842TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 140A IDM, 50mJ EAS, and 0.005 ohm RDS(on). Operating from -55 to 150 °C, it has a small outline package with GULL WING terminals for surface mount assembly.
IRF9540PBF by International Rectifier

IRF9540PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
FDD4243-G by Onsemi

FDD4243-G

Onsemi

Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;