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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | PSMNR51-25YLHX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 25 V; |
| Datasheet | PSMNR51-25YLHX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 380 A |
| Maximum Pulsed Drain Current (IDM): | 2174 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 333 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .00082 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 6300 mJ |
| Other Names: |
1727-PSMNR51-25YLHXCT 1727-PSMNR51-25YLHXTR 1727-PSMNR51-25YLHXDKR 934660322115 5202-PSMNR51-25YLHXTR |
| Maximum Feedback Capacitance (Crss): | 1548 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 25 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | IEC-60134 |
| Peak Reflow Temperature (C): | 260 |
