Nexperia - PZTA42-Q

  1. Home
  2. Nexperia - PZTA42-Q
PZTA42-Q by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PZTA42-Q
Description Power Bipolar Transistors;
Datasheet PZTA42-Q Datasheet
In Stock355
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
355 - -

Popular Products

Category Top Products

JANTXV2N3055 by Defense Logistics Agency

JANTXV2N3055

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; JEDEC-95 Code: TO-3;
BD139-16 by Central Semiconductor

BD139-16

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
TIP120 by STMicroelectronics

TIP120

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 65 W;
TIP122-S by Bourns

TIP122-S

Bourns

Bourns TIP122-S is a NPN Darlington transistor with hFE of 1000, VCE of 100V, and IC of 5A. Ideal for power applications in various industries due to its high current gain and voltage capabilities. Package style is flange mount with through-hole terminals for easy installation.
BD139G by Onsemi

BD139G

Onsemi

The Onsemi BD139G is a NPN BJT transistor with max. power dissipation of 12.5W, hFE of 25, and max. collector current of 1.5A. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 80V, operating up to 150°C in a rectangular package style with through-hole terminals.
BD679A by Crimson Semiconductor

BD679A

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE;
TIP35C by Onsemi

TIP35C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJE3055T by Onsemi

MJE3055T

Onsemi

MJE3055T by Onsemi is a NPN BJT transistor with max. power dissipation of 75W, ideal for switching applications. With a max. collector-emitter voltage of 60V and max. collector current of 10A, it operates b/w -55 to 150°C. Its package style is flange mount with through-hole terminals, making it suitable for various power circuit designs.
TIP111 by Inchange Semiconductor

TIP111

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
TIP115 by Inchange Semiconductor

TIP115

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
BDX53C by Bourns

BDX53C

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Terminal Position: SINGLE; No. of Terminals: 3;
2SC5200O by Unisonic Technologies

2SC5200O

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
JAN2N3055 by Api Technologies

JAN2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
JANTXV2N3055 by Vpt Components

JANTXV2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 70 V;
TIP115 by SPC TECHNOLOGY/ MULTICOMP

TIP115

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
BD679A by Comset Semiconductors

BD679A

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
ULN2803A by Allegro MicroSystems

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
TIP47 by Mospec Semiconductor

TIP47

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP125 by NXP Semiconductors

TIP125

NXP Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
BD140-16 by Central Semiconductor

BD140-16

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;