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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | 934052190118 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; No. of Elements: 1; Avalanche Energy Rating (EAS): 80 mJ; |
Datasheet | 934052190118 Datasheet |
In Stock | 4,628 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 80 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 55 A |
Maximum Pulsed Drain Current (IDM): | 220 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | ESD PROTECTED |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .018 ohm |