934056979127 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	934056979127
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .007 ohm; Transistor Application: SWITCHING;
Datasheet	934056979127 Datasheet
In Stock	2,736

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	460 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	560 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	5
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.007 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,736	-	-

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RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;