NXP Semiconductors - 934057525215

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

BC847-B by Infineon Technologies is a NPN BJT transistor with hFE of 200, ideal for amplifier applications. It has a max VCE of 45V and IC of 0.1A, operating up to 150°C. This surface-mount transistor in a small outline package offers a transition frequency of 250MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JEDEC-95 Code: TO-236AB;

BC547C by Diotec Semiconductor Ag is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It has a min DC current gain of 420 and can operate at temperatures up to 150°C. This transistor is commonly used in applications requiring low power dissipation and high frequency performance, such as audio amplifiers and switching circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Form: WIRE; JESD-30 Code: O-MBCY-W3;

BC857B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max collector-emitter voltage of 45V, it operates at temperatures up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum Operating Temperature: -65 Cel;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

NTE103 by Nte Electronics is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 24, and VCE of 16V. Ideal for switching applications due to its Germanium element material and max. collector current of 0.15A in a cylindrical package shape with wire terminals.

BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.

BC817-25LT3G by Onsemi is a NPN BJT transistor with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.5A IC and 0.3W Ptot capabilities. Its GULL WING terminals and SOT package make it suitable for surface mount PCB designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;