NXP Semiconductors - 934059074127

934059074127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934059074127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 934059074127 Datasheet
In Stock1,148
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 100 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 28.5 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 57.1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 150 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: FAST SWITCHING
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
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