NXP Semiconductors - 934060122127

934060122127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934060122127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 769 A; Avalanche Energy Rating (EAS): 630 mJ;
Datasheet 934060122127 Datasheet
In Stock2,053
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 630 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 769 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 75 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0043 ohm
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