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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | 934060169115 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): 55 A; Transistor Element Material: SILICON; |
Datasheet | 934060169115 Datasheet |
In Stock | 262 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 91 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 55 A |
Maximum Pulsed Drain Current (IDM): | 220 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 40 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .013 ohm |