934064242127 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	934064242127
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0079 ohm; Minimum DS Breakdown Voltage: 40 V;
Datasheet	934064242127 Datasheet
In Stock	2,210

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	179 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	100 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	500 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	40 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0079 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,210	-	-

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