NXP Semiconductors - 934064613115

  1. Home
  2. NXP Semiconductors - 934064613115
934064613115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934064613115
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 43000 MHz; Maximum Collector Current (IC): .01 A; Transistor Element Material: SILICON GERMANIUM;
Datasheet 934064613115 Datasheet
In Stock3,495
NAME DESCRIPTION
Nominal Transition Frequency (fT): 43000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .01 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 2.8 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: KA BAND
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,495 - -

Popular Products

Category Top Products

934061289115 by NXP Semiconductors

934061289115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;
MPSH81 by Onsemi

MPSH81

Onsemi

The Onsemi MPSH81 is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low capacitance of 0.85pF. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
MSD2714AT1 by Onsemi

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.
BF240RL1 by Onsemi

BF240RL1

Onsemi

The Onsemi BF240RL1 is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. Ideal for amplifier applications, it has a max collector current of 0.025A and low capacitance at 0.34pF. The through-hole package style makes it suitable for various electronic designs.
BFP405FH6327XTSA1 by Infineon Technologies

BFP405FH6327XTSA1

Infineon Technologies

BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.
FH102A-TR-E by Onsemi

FH102A-TR-E

Onsemi

FH102A-TR-E by Onsemi is an NPN RF BJT with 0.5W power dissipation, 90 min hFE, and 5000MHz fT. Ideal for high-frequency applications in electronics, it operates up to 150 °C with a collector current of 0.07A in surface-mount designs.
START499ETR by STMicroelectronics

START499ETR

STMicroelectronics

START499ETR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.6 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
934056631215 by NXP Semiconductors

934056631215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
HFA3046BZ by Renesas Electronics

HFA3046BZ

Renesas Electronics

Renesas Electronics' HFA3046BZ is an NPN RF BJT with 5 elements and 14 terminals. Operating in the ultra-high frequency band at 8V, it's ideal for amplifier applications. This complex transistor has a max transition frequency of 8000MHz and is surface mountable with a small outline package style.
JANTX2N2907A by Vpt Components

JANTX2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 200 Cel;
2N3866 by Crimson Semiconductor

2N3866

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
KSC1393 by Onsemi

KSC1393

Onsemi

KSC1393 by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, nominal transition frequency of 700 MHz, and max collector-emitter voltage of 30 V. This transistor operates in the very high-frequency band and has a max power dissipation of 0.25 W at an ambient temperature of 150 °C.
MPSH10RLRE by Onsemi

MPSH10RLRE

Onsemi

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.
3003 by Microsemi

3003

Microsemi

Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.
2N2369A by General Diode

2N2369A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
BFG67/X,215 by NXP Semiconductors

BFG67/X,215

NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.
FH105A-TR-E by Onsemi

FH105A-TR-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
MPS3563RLRE by Onsemi

MPS3563RLRE

Onsemi

MPS3563RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a VCEO of 12V, and IC of 0.05A. Ideal for amplifier applications in the UHF band, it features a plastic/epoxy package with through-hole terminals.
MRF911 by Motorola

MRF911

Motorola

MRF911 by Motorola is a NPN RF BJT transistor for switching applications. With a max. collector-emitter voltage of 12V, it operates in L band with fT of 5000 MHz. This surface-mount device has 4 terminals and a min hFE of 30, making it suitable for high-frequency signal amplification.