NXP Semiconductors - 934065355115

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;

NXP Semiconductors' BGA6130,118 is an RF & Microwave Amplifier with 3.6V power supply, 8 terminals, and 250mA max supply current. It features a plastic/epoxy package body material and nickel palladium gold terminal finish. Ideal for surface mount applications in various electronic devices.

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

GALI-51 by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for applications requiring surface mount construction in RF & microwave systems.

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

GALI-51F by Mini-circuits is a wide band low power RF amplifier with a gain of 14 dB. It operates from 0 MHz to 4000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification.

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.

NPA1003QA by M/a-com Technology Solutions is a wide band high power RF amplifier with 14 dB gain, operating from 20 MHz to 1500 MHz. Constructed using HEMT technology, it has a max VSWR of 10 and operates b/w -40°C to 85°C. Ideal for applications requiring surface mount packaging in RF & microwave systems.

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

Analog Devices' HMC311ST89TR is a wide band low power RF amplifier with 5V supply, operating from -40 to 85°C. It features bipolar technology, surface mount package, and draws max 74mA current. Ideal for RF & microwave applications requiring compact amplification solutions.

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.