NXP Semiconductors - 934066022115

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934066022115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934066022115
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 25 V;
Datasheet 934066022115 Datasheet
In Stock153
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 8 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 33 A
JEDEC-95 Code: MO-235
Maximum Pulsed Drain Current (IDM): 134 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 25 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH RELIABILITY
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0166 ohm
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