NXP Semiconductors - 934066497118

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934066497118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934066497118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0058 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 934066497118 Datasheet
In Stock4,499
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 385 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 597 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101; IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0058 ohm
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