NXP Semiconductors - 935289298115

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;

Analog Devices' HMC465LP5ETR is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handles up to 23 dBm CW input power, and has a max temperature range of -40 to +85°C. Ideal for RF and microwave applications requiring high performance in a compact plastic/epoxy package.

MAX2611EUS+T by Analog Devices is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

HMC372LP3ETR by Analog Devices is a wide band low power RF amplifier with 1 function and 16 terminals. It operates at temperatures ranging from -40 to 85°C and requires a 5V power supply. This surface mount device is made of plastic/epoxy and is commonly used in RF and microwave applications.

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 5;

MAX2643EXT-T by Maxim Integrated is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within specified frequency range.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

GALI-21 by Mini-circuits is a wide band low power RF amplifier with 11.5 dB gain, operating from 0 to 8000 MHz. It can handle up to 15 dBm CW input power and has a VSWR of 2.5, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -45°C to 85°C.

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

The Motorola MWA330 is a RF & Microwave Amplifier with max input power of 20 dBm and VSWR of 3. It operates in wide band low power applications from 0.1 MHz to 1000 MHz, making it ideal for various hybrid technology modules. With a metal package body, it can withstand temperatures from -25°C to 80°C.