NXP Semiconductors - 935305477118

  1. Home
  2. NXP Semiconductors - 935305477118
935305477118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935305477118
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Package Equivalence Code: SOLCC10,.12SQ,20;
Datasheet 935305477118 Datasheet
In Stock2,736
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1500 MHz
Maximum Supply Current: 85 mA
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 1.43
No. of Terminals: 10
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: SOLCC10,.12SQ,20
Screening Level: IEC-60134
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,736 - -

Popular Products

Category Top Products

MAMX-011009-TR1000 by M/a-com Technology Solutions

MAMX-011009-TR1000

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER;
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
MW7IC2040NR1 by NXP Semiconductors

MW7IC2040NR1

NXP Semiconductors

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.
AM-147-PIN by M/a-com Technology Solutions

AM-147-PIN

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;
AD8350ARMZ15-REEL7 by Analog Devices

AD8350ARMZ15-REEL7

Analog Devices

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
XF1001-SC-0G0T by Mimix Broadband

XF1001-SC-0G0T

Mimix Broadband

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;
CMPA801B025F by Wolfspeed

CMPA801B025F

Wolfspeed

RF/Microwave Amplifiers;
MSA-0686-BLKG by Agilent Technologies

MSA-0686-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;
RA07N4047M-501 by Mitsubishi Electric

RA07N4047M-501

Mitsubishi Electric

NARROW BAND HIGH POWER;
BGA612H6327XTSA1 by Infineon Technologies

BGA612H6327XTSA1

Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.
HMC498LC4TR by Analog Devices

HMC498LC4TR

Analog Devices

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.
ERA-2SM+ by Mini-circuits

ERA-2SM+

Mini-circuits

The Mini-circuits ERA-2SM+ is a wide band low power RF amplifier with 11.9 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 15 dBm input power, and has a VSWR of 1.6. Ideal for RF & microwave applications requiring compact surface mount components.
ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.
HMC1082LP4E by Hittite Microwave

HMC1082LP4E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;
ABA-52563-BLKG by Agilent Technologies

ABA-52563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;
MW7IC930NR1 by Freescale Semiconductor

MW7IC930NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;
HMC963LC4 by Hittite Microwave

HMC963LC4

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Minimum Operating Frequency: 6000 MHz; JESD-609 Code: e4; Gain: 16.5 dB; Maximum Input Power (CW): 0 dBm;
HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
HMC902LP3E by Analog Devices

HMC902LP3E

Analog Devices

HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.