NXP Semiconductors - 935312756128

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935312756128 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935312756128
Description RF Power Field-Effect Transistors;
Datasheet 935312756128 Datasheet
In Stock3,323
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PD54003S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
BLF175 by New Jersey Semiconductor Products

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N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
CGH40006S-TB by Wolfspeed

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CGH40006S-TB by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor comes in a small outline package suitable for surface mount installations.
MRF300AN-81MHZ by NXP Semiconductors

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934065672112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
PD60004S by STMicroelectronics

PD60004S

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PD60004S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L band frequencies. Its compact SO package ensures efficient surface mounting.
A2I25D025GNR1 by NXP Semiconductors

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RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
MRF134 by Tyco Electronics M/a-com

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Terminal Form: FLAT; No. of Elements: 1;
LET9150 by STMicroelectronics

LET9150

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LET9150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, breakdown voltage of 80 V, and operates in the L band. Ideal for high-power amplification with a compact surface mount design.
BLF6G15LS-250PBRN by NXP Semiconductors

BLF6G15LS-250PBRN

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N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 200 Cel; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Maximum Drain Current (Abs) (ID): 64 A; Maximum Drain Current (ID): 64 A;
934064687118 by NXP Semiconductors

934064687118

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
MRF1570FNT1 by NXP Semiconductors

MRF1570FNT1

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NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.
ARF463AP1G by Microsemi

ARF463AP1G

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Case Connection: SOURCE; Qualification: Not Qualified;
RF5L08600CB4 by STMicroelectronics

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MRF8S21200HSR6 by Freescale Semiconductor

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
934064993112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Highest Frequency Band: S BAND; Terminal Form: FLAT;
AFT26H250-24SR6 by NXP Semiconductors

AFT26H250-24SR6

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NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
PD85025-E by STMicroelectronics

PD85025-E

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PD85025-E by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE up to 165°C.
A2T18H410-24SR6 by NXP Semiconductors

A2T18H410-24SR6

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
RF5L08350CB4 by STMicroelectronics

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