NXP Semiconductors - 935317799128

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935317799128 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935317799128
Description RF Power Field-Effect Transistors;
Datasheet 935317799128 Datasheet
In Stock1,482
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LET9130 by STMicroelectronics

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LET19060C by STMicroelectronics

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LET19060C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 130 W.
934064594118 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; Transistor Element Material: SILICON;
GS66508T-TR by Gan Systems

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Gan Systems

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PD85050S by STMicroelectronics

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BLF175 by NXP Semiconductors

BLF175

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BLF175 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage. Operating in the very high frequency band, it has a max drain current of 4A and power dissipation of 68W. Ideal for amplifier applications, this MOSFET features an isolated case connection and operates at up to 200°C.
BLF177 by NXP Semiconductors

BLF177

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BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
STAC4932F by STMicroelectronics

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STAC4932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min breakdown voltage, operates in the ultra-high frequency band, and supports surface mount technology. With a max temp of 200 °C, it's ideal for high-performance circuits.
NPT1012B by Nitronex

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Shape: RECTANGULAR;
STAC2932B by STMicroelectronics

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STAC2932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.
MRF7P20040HSR3 by NXP Semiconductors

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NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
934065321112 by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Terminal Position: DUAL; Terminal Form: FLAT;
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Toshiba

Toshiba's TIM3742-25UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a max drain current of 20A and a power dissipation of 100W, this transistor operates in depletion mode at up to 175°C ambient temperature.
PD57070STR-E by STMicroelectronics

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PD55035S-E by STMicroelectronics

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PD55035S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance with a max power dissipation of 95 W.
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A2T18S166W12SR3

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MMRF5300NR5 by NXP Semiconductors

MMRF5300NR5

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
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Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Terminal Form: FLAT; Package Shape: SQUARE;
MRF8HP21130HSR3 by Freescale Semiconductor

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Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F4;
PD54008-E by STMicroelectronics

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STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.