NXP Semiconductors - 935319266528

  1. Home
  2. NXP Semiconductors - 935319266528
935319266528 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935319266528
Description WIDE BAND HIGH POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
Datasheet 935319266528 Datasheet
In Stock4,351
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND HIGH POWER
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,351 - -

Popular Products

Category Top Products

XP1050-QJ-0G00 by M/a-com Technology Solutions

XP1050-QJ-0G00

M/a-com Technology Solutions

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
MGA-635P8-BLKG by Broadcom

MGA-635P8-BLKG

Broadcom

Broadcom's MGA-635P8-BLKG is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and requires a 5V power supply. Ideal for wideband medium-power applications, it features surface mounting and operates in temperatures ranging from -40 to 85°C.
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC634LC4 by Analog Devices

HMC634LC4

Analog Devices

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;
HMC414MS8GETR by Analog Devices

HMC414MS8GETR

Analog Devices

Analog Devices' HMC414MS8GETR is a RF amplifier with 17 dB gain, operating from 2200-2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
SBF-4089Z by Sirenza Microdevices

SBF-4089Z

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
MGA-545P8-TR1 by Agilent Technologies

MGA-545P8-TR1

Agilent Technologies

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10.5 dB;
NBB-400-T1 by Qorvo

NBB-400-T1

Qorvo

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.
MGA-82563-TR1 by Agilent Technologies

MGA-82563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
MGA-81563-TR1G by Broadcom

MGA-81563-TR1G

Broadcom

Broadcom's MGA-81563-TR1G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C.
SGA-6286Z by Sirenza Microdevices

SGA-6286Z

Sirenza Microdevices

SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.
MGA-72543-BLK by Broadcom

MGA-72543-BLK

Broadcom

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.
SKY65624-682LF by Skyworks Solutions

SKY65624-682LF

Skyworks Solutions

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.
HMC3653LP3BETR by Hittite Microwave

HMC3653LP3BETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
TGA2622-CP by Qorvo

TGA2622-CP

Qorvo

WIDE BAND HIGH POWER;
PHA-13LN+ by Mini-circuits

PHA-13LN+

Mini-circuits

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.
HMC794LP3ETR by Analog Devices

HMC794LP3ETR

Analog Devices

WIDE BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
AMMC-6442-W50 by Broadcom

AMMC-6442-W50

Broadcom

AMMC-6442-W50 by Broadcom is a wide band medium power RF amplifier with 20 dB gain. It operates b/w 37-40 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring a 50 ohm characteristic impedance and powered by a 5V supply.
CMD311P34 by Qorvo

CMD311P34

Qorvo

WIDE BAND LOW POWER;