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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | 935331769528 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G2; |
| Datasheet | 935331769528 Datasheet |
| In Stock | 3,551 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |
| Minimum Power Gain (Gp): | 20 dB |
| JEDEC-95 Code: | TO-270BA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 65 V |
| Peak Reflow Temperature (C): | 260 |
