STMicroelectronics - PD57070S

  1. Home
  2. STMicroelectronics - PD57070S
PD57070S by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number PD57070S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Drain Current (ID): 7 A; JESD-30 Code: R-PDSO-F2;
Datasheet PD57070S Datasheet
In Stock3,725
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 7 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 95 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 165 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 7 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,725 - -

Popular Products

Category Top Products

MRF6S20010NR1 by NXP Semiconductors

MRF6S20010NR1

NXP Semiconductors

NXP Semiconductors' MRF6S20010NR1 is a RF Power FET with 68V DS breakdown voltage, operating in S Band. It's an N-CHANNEL transistor for amplification, featuring METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount applications with max temp of 225°C, ideal for high-frequency amplification needs.
CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

CGH40006P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can handle up to 0.75A Drain Current.
MRF1570FNT1 by NXP Semiconductors

MRF1570FNT1

NXP Semiconductors

NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.
PD55003L by STMicroelectronics

PD55003L

STMicroelectronics

STMicroelectronics PD55003L is an N-CHANNEL RF Power FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. With 40V DS Breakdown Voltage, it has a max ID of 2.5A and can dissipate up to 26.6W power at 150°C.
A2T18H410-24SR6 by NXP Semiconductors

A2T18H410-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2T21H360-23NR6 by NXP Semiconductors

A2T21H360-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
TGF4212SCMX by Texas Instruments

TGF4212SCMX

Texas Instruments

TGF4212SCMX by Texas Instruments is an N-CHANNEL RF Power FET for AMPLIFIER applications. Features include 10V DS Breakdown Voltage, DEPLETION MODE operation, and KU BAND frequency band. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
RF2L15200CB4 by STMicroelectronics

RF2L15200CB4

STMicroelectronics

RF Power Field-Effect Transistors;
PD54003L-E by STMicroelectronics

PD54003L-E

STMicroelectronics

STMicroelectronics PD54003L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in ENHANCEMENT MODE, it offers 4A Drain Current and 19.5W Power Dissipation at 150°C max temp in ULTRA HIGH FREQUENCY BAND. Package: PLASTIC/EPOXY CHIP CARRIER with SOURCE connection.
MRF1K50HR5 by NXP Semiconductors

MRF1K50HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
TGF2023-2-02 by Qorvo

TGF2023-2-02

Qorvo

Qorvo's TGF2023-2-02 is an N-channel RF Power FET for amplifier applications in KU band. Featuring GaN technology, it has a max ID of 2.5A and operates in depletion mode. This single-configured transistor is surface-mountable with Ni/Au terminal finish.
MRF6S20010NR1 by Freescale Semiconductor

MRF6S20010NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
TRF7000PK by Texas Instruments

TRF7000PK

Texas Instruments

TRF7000PK by Texas Instruments is a single N-channel RF Power FET with 15V DS breakdown voltage and 6A drain current. Ideal for L Band applications, it operates in depletion mode with a max power dissipation of 4W at 175°C ambient temperature.
A2T18S166W12SR3 by NXP Semiconductors

A2T18S166W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF147 by New Jersey Semiconductor Products

BLF147

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AFT09H310-03SR6 by NXP Semiconductors

AFT09H310-03SR6

NXP Semiconductors

NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
AFT27S010NT1 by Freescale Semiconductor

AFT27S010NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD55008 by STMicroelectronics

PD55008

STMicroelectronics

STMicroelectronics PD55008 is an N-CHANNEL RF Power FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It features a single configuration, GULL WING terminals, and operates in enhancement mode. With 4A max drain current and 52.8W power dissipation, it offers high performance in a small outline package.
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;