NXP Semiconductors - 935337042515

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935337042515 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935337042515
Description RF Power Field-Effect Transistors;
Datasheet 935337042515 Datasheet
In Stock4,510
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PD85025-E by STMicroelectronics

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BLF177 by NXP Semiconductors

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BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
934061138112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Terminal Position: DUAL; Terminal Form: FLAT;
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934061845118 by NXP Semiconductors

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933817030112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;
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Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.
MW6S010NR1 by Freescale Semiconductor

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MW6S010GNR1 by NXP Semiconductors

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