NXP Semiconductors - 935354975128

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935354975128 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935354975128
Description RF Power Field-Effect Transistors;
Datasheet 935354975128 Datasheet
In Stock4,418
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;
FLL177ME by Fujitsu Semiconductor America

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;
CGHV40030F by Wolfspeed

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CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
MRFE6VP8600HR5 by Freescale Semiconductor

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1052 W; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF6S20010GNR1 by Freescale Semiconductor

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;
LET9045F by STMicroelectronics

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LET9045F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its flatpack design ensures efficient surface mounting.
MHT1008NT1 by NXP Semiconductors

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NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
DE475-501N44A by IXYS Corporation

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DE475-501N44A by IXYS is a N-channel RF Power FET with 500V DS breakdown voltage, suitable for switching applications in the VHF band. It features a max drain current of 48A, operates in enhancement mode, and has a package style of small outline.
PD54008L-E by STMicroelectronics

PD54008L-E

STMicroelectronics

STMicroelectronics PD54008L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 26.7W power dissipation and operates in ENHANCEMENT MODE at up to 150°C.
A2V09H300-04NR3 by NXP Semiconductors

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RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
934064584112 by NXP Semiconductors

934064584112

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF5P21180 by Motorola

MRF5P21180

Motorola

MRF5P21180 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, operating in S BAND. It has a power dissipation of 437.5W and operates at up to 200°C. Commonly used as an amplifier in high-frequency applications due to its dual-element configuration and metal-oxide semiconductor technology.
BLF861A,112 by NXP Semiconductors

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NXP Semiconductors' BLF861A,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18A Drain Current. Commonly used in amplifiers for Ultra High Frequency applications, it features a CERAMIC, METAL-SEALED COFIRED package and operates in Enhancement Mode up to 200°C.
934061249112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
AFV10700HSR5 by NXP Semiconductors

AFV10700HSR5

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AFV10700HSR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 105V and a Min Power Gain of 18dB. Commonly used in amplifiers, it operates in the L BAND frequency range. This CERAMIC, METAL-SEALED COFIRED transistor has a max operating temperature of 225°C and can handle peak reflow temperatures up to 260°C.
934065124112 by NXP Semiconductors

934065124112

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
RF2L36040CF2 by STMicroelectronics

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STMicroelectronics

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PD20010STR-E

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MRFE6VS25GNR1 by NXP Semiconductors

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PD84008S-E by STMicroelectronics

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PD84008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.