NXP Semiconductors - 935373612598

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935373612598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935373612598
Description RF Power Field-Effect Transistors;
Datasheet 935373612598 Datasheet
In Stock827
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MRF134 by Tyco Electronics M/a-com

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A2G35S200-01SR3 by NXP Semiconductors

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BLF6G15L-40BRN by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;
PD85015-E by STMicroelectronics

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PD85015-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
934065971112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 60 V; Highest Frequency Band: S BAND;
CGHV37400F by Wolfspeed

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BLF278 by New Jersey Semiconductor Products

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PD60015S by STMicroelectronics

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PD60015S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
ST16010 by STMicroelectronics

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BLF6G15L-500H by NXP Semiconductors

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BLF6G15L-500H by NXP is an N-channel RF power FET designed for switching applications. It features a 100V min DS breakdown voltage, operates in the L band, and supports a max drain current of 45A. Ideal for high-frequency amplification in communication systems.
PD57030S by STMicroelectronics

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A3V07H600-42NR6 by NXP Semiconductors

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MRF1513T1 by M/a-com Technology Solutions

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M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
BLF647PS,112 by Ampleon Netherlands B V

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BLF3G21-30,112 by NXP Semiconductors

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NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
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