NXP Semiconductors - 935374082598

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935374082598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935374082598
Description RF Power Bipolar Transistors;
Datasheet 935374082598 Datasheet
In Stock4,963
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BLT92/SL by NXP Semiconductors

BLT92/SL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; JESD-30 Code: O-CRDB-F4; Transistor Application: AMPLIFIER;
PLB16012U by NXP Semiconductors

PLB16012U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .9 A; Package Style (Meter): FLANGE MOUNT;
BFG235E6327 by Infineon Technologies

BFG235E6327

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
2N5641 by Motorola

2N5641

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;
SD1476 by STMicroelectronics

SD1476

STMicroelectronics

SD1476 by STMicroelectronics is a NPN RF BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band, with a max collector-emitter voltage of 40V and max collector current of 25A. The package style is flange mount, making it ideal for surface mount applications.
AM80912-030 by STMicroelectronics

AM80912-030

STMicroelectronics

STMicroelectronics AM80912-030 is an NPN BJT transistor with 7.8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75 W and can handle up to 3.5 A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal package and flat terminal form.
RZB12250Y by NXP Semiconductors

RZB12250Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 7 dB; Qualification: Not Qualified; Terminal Position: DUAL;
AM1011-070 by STMicroelectronics

AM1011-070

STMicroelectronics

STMicroelectronics' AM1011-070 is an NPN RF BJT with a single configuration for switching applications. It offers a min power gain of 6.7 dB, can handle up to 8A collector current, and operates in L Band frequencies. The transistor comes in a ceramic-metal-sealed co-fired package with flange mount style, suitable for high-power dissipation up to 200W at temperatures up to 250 °C.
BLS3135-20,114 by NXP Semiconductors

BLS3135-20,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
2N4041 by Texas Instruments

2N4041

Texas Instruments

2N4041 by Texas Instruments is an NPN RF BJT with 400 MHz fT, 40V VCEO, and 18W Ptot. Ideal for high-frequency applications in a round DISK BUTTON package with flat terminals.
2SC2879 by Asi Semiconductor

2SC2879

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;
LLE15180X by NXP Semiconductors

LLE15180X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 22 V;
2SC2319 by Toshiba

2SC2319

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2900 MHz; Maximum Collector Current (IC): .35 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934021700114 by NXP Semiconductors

934021700114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;
RXB12350Y by NXP Semiconductors

RXB12350Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; No. of Terminals: 2;
MX1011B700Y by NXP Semiconductors

MX1011B700Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 2; Terminal Form: FLAT;
RZ3135B28W by NXP Semiconductors

RZ3135B28W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
AM0912-080 by STMicroelectronics

AM0912-080

STMicroelectronics

STMicroelectronics' AM0912-080 is a NPN RF BJT transistor with 8.4 dB min power gain, ideal for L Band applications. It has a max power dissipation of 220 W and can handle up to 7 A collector current, suitable for high-power switching operations in various electronic devices.
BLU97 by NXP Semiconductors

BLU97

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON;
BLY89C by NXP Semiconductors

BLY89C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 6 A; Package Shape: ROUND;