NXP Semiconductors - 935379256598

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935379256598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935379256598
Description RF Power Field-Effect Transistors;
Datasheet 935379256598 Datasheet
In Stock1,176
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MRF141G by M/a-com Technology Solutions

MRF141G

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
TGF2023-2-02 by Qorvo

TGF2023-2-02

Qorvo

Qorvo's TGF2023-2-02 is an N-channel RF Power FET for amplifier applications in KU band. Featuring GaN technology, it has a max ID of 2.5A and operates in depletion mode. This single-configured transistor is surface-mountable with Ni/Au terminal finish.
BLF861A by Asi Semiconductor

BLF861A

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
D2002UK by Tt Electronics Plc

D2002UK

Tt Electronics Plc

D2002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max ID of 2A and can withstand temperatures up to 200°C.
D1028UK by Tt Electronics Plc

D1028UK

Tt Electronics Plc

D1028UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand up to 200°C operating temperature.
934065979118 by NXP Semiconductors

934065979118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 4; Minimum DS Breakdown Voltage: 65 V;
MRF151 by M/a-com Technology Solutions

MRF151

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 4; Maximum Drain Current (Abs) (ID): 16 A;
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
PD55015S by STMicroelectronics

PD55015S

STMicroelectronics

PD55015S by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 5A and a max power dissipation of 73W.
PD20015TR-E by STMicroelectronics

PD20015TR-E

STMicroelectronics

PD20015TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 79 W.
PD60004 by STMicroelectronics

PD60004

STMicroelectronics

PD60004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in the L band, and supports surface mount with a compact SO package. This transistor excels in high-frequency performance up to 165 °C.
STAC3932B by STMicroelectronics

STAC3932B

STMicroelectronics

STAC3932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, breakdown voltage of 250 V, and power dissipation up to 625 W. Ideal for high-performance RF amplification in compact designs.
CGHV31500F1 by Wolfspeed

CGHV31500F1

Wolfspeed

RF Power Field-Effect Transistors;
LET16045C by STMicroelectronics

LET16045C

STMicroelectronics

LET16045C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for AMPLIFIER applications in L BAND frequency range. With 9A Drain Current and 100W Power Dissipation, it is suitable for high-power RF amplification needs.
A2T20H330W24NR6 by NXP Semiconductors

A2T20H330W24NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40;
934065978118 by NXP Semiconductors

934065978118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
AFT09H310-03SR6 by Freescale Semiconductor

AFT09H310-03SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Peak Reflow Temperature (C): 260;
935442486528 by NXP Semiconductors

935442486528

NXP Semiconductors

RF Power Field-Effect Transistors;