NXP Semiconductors - 935392037598

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935392037598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935392037598
Description RF Power Field-Effect Transistors;
Datasheet 935392037598 Datasheet
In Stock2,039
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PD57006STR-E by STMicroelectronics

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PD57006STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.
A3T21H360W23SR6 by NXP Semiconductors

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MRF7P20040HSR3 by Freescale Semiconductor

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
LET21004 by STMicroelectronics

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LET21004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at frequencies in the S band, and supports a max drain current of 1A. Ideal for compact surface mount designs, it excels in high-temperature environments.
A3T23H300W23SR6 by NXP Semiconductors

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CG2H40045P by Wolfspeed

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CG2H40045P by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage. Featuring 15dB Power Gain, it operates in S BAND for AMPLIFIER applications. Utilizing GALLIUM NITRIDE tech, it has a max ID of 6A and can withstand temps from -40 to 150 °C.
STAC2942F by STMicroelectronics

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STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
BLF147 by New Jersey Semiconductor Products

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N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CG2H40010F by Wolfspeed

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Wolfspeed's CG2H40010F is an N-CHANNEL RF FET with 84V DS Breakdown Voltage, 15dB Power Gain for AMPLIFIER applications in C BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE, with max. temp of 150°C and drain current of 1.5A.
SD56150 by STMicroelectronics

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A2G22S251-01SR3 by NXP Semiconductors

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NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
PD57006-E by STMicroelectronics

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A3T21H400W23SR6 by NXP Semiconductors

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N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: FLAT; Maximum Operating Temperature: 225 Cel; Transistor Element Material: SILICON;
PD60015 by STMicroelectronics

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STAC1011-500 by STMicroelectronics

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AFG24S100HR5 by NXP Semiconductors

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PD84008STR-E by STMicroelectronics

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MRF186 by NXP Semiconductors

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