NXP Semiconductors - A2I09VD050GNR1

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A2I09VD050GNR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number A2I09VD050GNR1
Description WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;
Datasheet A2I09VD050GNR1 Datasheet
In Stock4,312
NAME DESCRIPTION
Other Names: 568-A2I09VD050GNR1TR
935375786528
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 575 MHz
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 12
Maximum Input Power (CW): 20 dBm
Technology: LDMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 960 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 35 dB
Power Supplies (V): 48
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