NXP Semiconductors - A3I35D025WGNR1

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A3I35D025WGNR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number A3I35D025WGNR1
Description NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;
Datasheet A3I35D025WGNR1 Datasheet
In Stock2,515
NAME DESCRIPTION
Other Names: 568-A3I35D025WGNR1TR
935373851528
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 3200 MHz
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 17
Maximum Input Power (CW): 28 dBm
Technology: LDMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 4000 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 26.5 dB
Power Supplies (V): 28
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