NXP Semiconductors - A5G07H800W19NR3

  1. Home
  2. NXP Semiconductors - A5G07H800W19NR3
A5G07H800W19NR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A5G07H800W19NR3
Description RF Power Field-Effect Transistors;
Datasheet A5G07H800W19NR3 Datasheet
In Stock7,756
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
7,756 - -

Popular Products

Category Top Products

LET20030S by STMicroelectronics

LET20030S

STMicroelectronics

LET20030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max power dissipation of 140 W, a breakdown voltage of 65 V, and operates in the L band. This compact device excels in high-frequency performance with enhanced mode operation.
BLF861A,112 by NXP Semiconductors

BLF861A,112

NXP Semiconductors

NXP Semiconductors' BLF861A,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18A Drain Current. Commonly used in amplifiers for Ultra High Frequency applications, it features a CERAMIC, METAL-SEALED COFIRED package and operates in Enhancement Mode up to 200°C.
A3T21H455W23SR6 by NXP Semiconductors

A3T21H455W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
STAC4932F by STMicroelectronics

STAC4932F

STMicroelectronics

STAC4932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min breakdown voltage, operates in the ultra-high frequency band, and supports surface mount technology. With a max temp of 200 °C, it's ideal for high-performance circuits.
CGHV96130F by Wolfspeed

CGHV96130F

Wolfspeed

RF Power Field-Effect Transistors;
CGHV27030S by Wolfspeed

CGHV27030S

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2931-12W by STMicroelectronics

SD2931-12W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934065971112 by NXP Semiconductors

934065971112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 60 V; Highest Frequency Band: S BAND;
RF2L42008CG2 by STMicroelectronics

RF2L42008CG2

STMicroelectronics

RF Power Field-Effect Transistors;
MRF136Y by New Jersey Semiconductor Products

MRF136Y

New Jersey Semiconductor Products

N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 5 A; No. of Elements: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934061172118 by NXP Semiconductors

934061172118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLATPACK; Highest Frequency Band: S BAND;
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
BLF147 by NXP Semiconductors

BLF147

NXP Semiconductors

The NXP Semiconductors BLF147 is a single N-channel RF Power FET with a very high frequency band. It has a max drain current of 25A, operating in enhancement mode for amplifier applications. With a package style of flange mount and ceramic-metal-sealed co-fired body material, it offers a max power dissipation of 220W at 200°C ambient temperature.
MRF176GU by Tyco Electronics M/a-com

MRF176GU

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
A3T18H360W23SR6 by NXP Semiconductors

A3T18H360W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;
A2V09H525-04NR6 by NXP Semiconductors

A2V09H525-04NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
BLF574 by NXP Semiconductors

BLF574

NXP Semiconductors

The NXP Semiconductors BLF574 is an RF Power FET with a common source configuration and 2 elements. Operating in the ultra high frequency band, it has a max drain current of 56A and operates in enhancement mode. Ideal for amplifier applications, this transistor features a ceramic-metal sealed co-fired package body material and can withstand temperatures up to 225°C.
MRF1513T1 by M/a-com Technology Solutions

MRF1513T1

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;