NXP Semiconductors - AFT18S230SR3

  1. Home
  2. NXP Semiconductors - AFT18S230SR3
AFT18S230SR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number AFT18S230SR3
Description N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
In Stock4,189
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,189 $132.280 $554,120.920

Popular Products

Category Top Products

RD00HHS1-101 by Mitsubishi Electric

RD00HHS1-101

Mitsubishi Electric

RD00HHS1-101 by Mitsubishi Electric is a N-CHANNEL RF FET with 30V DS breakdown voltage, suitable for amplifier applications. Operating in enhancement mode, it offers 0.2A max drain current and 3.1W power dissipation at 150°C max temperature. Ideal for high frequency band circuits due to its small outline package style.
934064628118 by NXP Semiconductors

934064628118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2;
PD57060S by STMicroelectronics

PD57060S

STMicroelectronics

PD57060S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MRF374 by Freescale Semiconductor

MRF374

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
D2003UK by Tt Electronics Plc

D2003UK

Tt Electronics Plc

D2003UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, it has a max Drain Current of 1A and can withstand temperatures up to 200°C.
934066857112 by NXP Semiconductors

934066857112

NXP Semiconductors

NXP Semiconductors' 934066857112 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for SWITCHING applications in L BAND frequency range. The transistor is METAL-OXIDE SEMICONDUCTOR technology based and comes in a FLATPACK package style for surface mount installation.
MRFE6VP5600HR6 by NXP Semiconductors

MRFE6VP5600HR6

NXP Semiconductors

NXP Semiconductors' MRFE6VP5600HR6 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It has a max power dissipation of 1670W and can handle a min DS breakdown voltage of 130V. Commonly used as an amplifier, this transistor is designed for surface mount applications.
934065183112 by NXP Semiconductors

934065183112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Additional Features: HIGH RELIABILITY; Minimum DS Breakdown Voltage: 65 V;
PTFA180701EV4R250XTMA1 by Wolfspeed

PTFA180701EV4R250XTMA1

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF177,112 by NXP Semiconductors

BLF177,112

NXP Semiconductors

BLF177,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 16A Drain Current. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 220W and operates in enhancement mode.
MRF8P29300HR6 by NXP Semiconductors

MRF8P29300HR6

NXP Semiconductors

NXP Semiconductors' MRF8P29300HR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR technology has a max temp of 225°C and comes in a FLANGE MOUNT package style.
TSD2903 by STMicroelectronics

TSD2903

STMicroelectronics

TSD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 3.9A, making it ideal for amplifier applications in enhancement mode.
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
MRF151G by Motorola

MRF151G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
MRF7P20040HSR3 by NXP Semiconductors

MRF7P20040HSR3

NXP Semiconductors

NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
RF2L42008CG2 by STMicroelectronics

RF2L42008CG2

STMicroelectronics

RF Power Field-Effect Transistors;
A2I25D012NR1 by NXP Semiconductors

A2I25D012NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
AFT05MS003NT1 by Freescale Semiconductor

AFT05MS003NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;
RF3L05250CB4 by STMicroelectronics

RF3L05250CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;