NXP Semiconductors - AFT23H200-4S2LR6

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AFT23H200-4S2LR6 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number AFT23H200-4S2LR6
Description N-CHANNEL; Maximum Power Dissipation (Abs): 294 W; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet AFT23H200-4S2LR6 Datasheet
In Stock3,483
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 294 W
Maximum Time At Peak Reflow Temperature (s): 40
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
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Pricing (USD)

Qty. Unit Price Ext. Price
3,483 $108.760 $378,811.080

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