NXP Semiconductors - AFT26P100-4WSR3,128

  1. Home
  2. NXP Semiconductors - AFT26P100-4WSR3,128
AFT26P100-4WSR3,128 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number AFT26P100-4WSR3,128
Description RF Power Field-Effect Transistors;
Datasheet AFT26P100-4WSR3,128 Datasheet
In Stock3,006
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,006 - -

Popular Products

Category Top Products

AFT09MS031NR1 by NXP Semiconductors

AFT09MS031NR1

NXP Semiconductors

AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
A2V09H300-04NR3 by NXP Semiconductors

A2V09H300-04NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
AFT09MS031GNR1 by NXP Semiconductors

AFT09MS031GNR1

NXP Semiconductors

AFT09MS031GNR1 by NXP Semiconductors is an N-CHANNEL RF Power FET with 317W power dissipation, suitable for surface mount applications. It operates at a max temp of 150°C and features metal-oxide semiconductor technology. Ideal for high-power RF amplifiers in various electronic devices.
FLU35XM by Fujitsu

FLU35XM

Fujitsu

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.
CG2H40045F by Wolfspeed

CG2H40045F

Wolfspeed

CG2H40045F by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage and 15dB Power Gain, ideal for S BAND applications. Featuring Gallium Nitride technology, it operates in DEPLETION MODE at temperatures from -40 to 150 °C, with a max ID of 6A.
934064584112 by NXP Semiconductors

934064584112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD57030-E by STMicroelectronics

PD57030-E

STMicroelectronics

STMicroelectronics PD57030-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max power dissipation of 52.8W.
ARF463AP1G by Microchip Technology

ARF463AP1G

Microchip Technology

Microchip Technology's ARF463AP1G is a N-CHANNEL RF Power FET with 500V DS Breakdown Voltage. Ideal for amplifier applications in the VHF band, it offers 9A Drain Current and 180W Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, featuring a SOURCE case connection.
SD57060-01 by STMicroelectronics

SD57060-01

STMicroelectronics

SD57060-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.
934065908112 by NXP Semiconductors

934065908112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AFT20P060-4NR3 by Freescale Semiconductor

AFT20P060-4NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
MRF136 by Motorola

MRF136

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
PD55008S-E by STMicroelectronics

PD55008S-E

STMicroelectronics

STMicroelectronics PD55008S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 52.8W Power Dissipation, SMALL OUTLINE package style, and operates at up to 165°C temperature.
BLF6G20-75 by NXP Semiconductors

BLF6G20-75

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Transistor Element Material: SILICON;
MRFE6VP5150GNR1 by Freescale Semiconductor

MRFE6VP5150GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; No. of Elements: 2;
PD57002-01 by STMicroelectronics

PD57002-01

STMicroelectronics

PD57002-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 0.25A. Ideal for compact, high-performance circuits in various electronic devices.
TGI7785-25L by Toshiba

TGI7785-25L

Toshiba

Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.
A2T27S020GNR1 by NXP Semiconductors

A2T27S020GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;