NXP Semiconductors - BB811-T

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

SMV1265-011 by Skyworks Solutions is a single hyperabrupt varactor diode with 13.8 pF capacitance, 28 V breakdown voltage, and 0.25 W power dissipation. It is used in applications requiring variable capacitance diodes for RF tuning circuits.

1N5699 by Onsemi is a Varactor Diode with 12pF capacitance, 65V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;

TIV308 by Texas Instruments is a Varactor Diode with 11 pF capacitance, 20 V breakdown voltage, and 200 min quality factor. It is ideal for applications requiring variable capacitance diodes in isolated axial configurations with a max power dissipation of 0.25 W.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TIV22 by Texas Instruments is a single varactor diode with 11 pF capacitance, 30 V breakdown voltage, and 0.25 W power dissipation. Ideal for ultra high frequency applications due to its isolated case connection and silicon diode element material.

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.

1N5445 by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 15 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5148A by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 47 pF, and breakdown voltage of 60V. It is used in RF tuning circuits for applications requiring variable capacitance control.