NXP Semiconductors - BCX56-16/T3

  1. Home
  2. NXP Semiconductors - BCX56-16/T3
BCX56-16/T3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BCX56-16/T3
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 1 A;
Datasheet BCX56-16/T3 Datasheet
In Stock1,572
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.3 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-243AA
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Reference Standard: IEC-60134
Maximum VCEsat: .5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,572 - -

Popular Products

Category Top Products

BD140-16 by Continental Device India

BD140-16

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BD679 by STMicroelectronics

BD679

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
ULN2804A by Motorola

ULN2804A

Motorola

ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.
TIP31-C by Secos

TIP31-C

Secos

Secos TIP31-C is a NPN BJT transistor with max VCEsat of 1.2V, ideal for switching applications. It has a max power dissipation of 40W and max collector-emitter voltage of 100V. With hFE of 10, it operates b/w -65 to 150°C, suitable for high-power circuits in various electronic devices.
2N3055 by Swampscott Electronics

2N3055

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055 by Micro Electronics

2N3055

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BDX53C by Power Innovations

BDX53C

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
TIP42A by Continental Device India

TIP42A

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD679A by New Jersey Semiconductor Products

BD679A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON; No. of Elements: 1;
TIP125 by NXP Semiconductors

TIP125

NXP Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP110 by Motorola

TIP110

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
2N4401T&A by Continental Device India

2N4401T&A

Continental Device India

2N4401T&A by Continental Device India is a NPN BJT transistor with max VCEsat of 0.75V, hFE of 40, and IC of 0.6A. Ideal for switching applications due to fast rise time (tr) of 20ns and fall time (tf) of 30ns. Operates in temp range -55 to 150 °C with max power dissipation of 1.5W.
MJD340T4 by Motorola

MJD340T4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
TIP42A by Semiconductors

TIP42A

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP112 by Continental Device India

TIP112

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE;
MJD127T4G by Onsemi

MJD127T4G

Onsemi

MJD127T4G by Onsemi is a PNP BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 8A, and power dissipation of 20W. With a transition frequency of 4MHz, it operates b/w -65 to 150°C making it suitable for various power control circuits.
BD139 by Onsemi

BD139

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
JAN2N3055 by M/a-com Technology Solutions

JAN2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Minimum DC Current Gain (hFE): 5;
BDW93C by Samsung

BDW93C

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
MJ11015G by Onsemi

MJ11015G

Onsemi

MJ11015G by Onsemi is a PNP power BJT with 200W power dissipation, 120V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a round package with flange mount style.