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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BF1100 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; No. of Terminals: 4; |
| Datasheet | BF1100 Datasheet |
| In Stock | 238 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .03 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Feedback Capacitance (Crss): | .035 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 14 V |
| Qualification: | Not Qualified |
| Additional Features: | LOW NOISE |
| Maximum Drain Current (Abs) (ID): | .03 A |
| Peak Reflow Temperature (C): | 260 |
