NXP Semiconductors - BF1108R,235

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BF1108R,235 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1108R,235
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet BF1108R,235 Datasheet
In Stock2,678
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .01 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Elements: 1
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .01 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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