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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BF1205,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: DUAL GATE, ENHANCEMENT MODE; |
| Datasheet | BF1205,115 Datasheet |
| In Stock | 2,661 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NXPNXPBF1205,115 568-6157-6 568-6157-2 BF1205,115-ND 934056890115 568-6157-1 2156-BF1205115-NXTR BF1205115 954-BF1205115 954-BF1205,115-CHP |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .03 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .2 W |
| No. of Elements: | 1 |
| Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .03 A |









